publication order number: BUL642D2/d ? semiconductor components industries, llc, 2005 august, 2005 ? rev. 1 1 BUL642D2 high speed, high gain bipolar npn transistor with integrated collector?emitter and built?in efficient antisaturation network the BUL642D2 is a state?of?the?art high speed high gain bipolar transistor (h2bip). tight dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for light ballast application. a new development process brings avalanche energy capability, making the device extremely rugged. features ? low base drive requirement ? high peak dc current gain (55 typical) @ i c = 300 ma/5 v ? extremely low storage time min/max guarantees due to the h2bip structure which minimizes the spread ? integrated collector?emitter free wheeling diode ? fully characterized dynamic v cesat ? ?six sigma? process providing tight and reproducible parameter spreads ? avalanche energy 20 mj typical capability ? pb?free package is available* *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 3 amperes 825 volts 75 watts power transistor http://onsemi.com device package shipping ordering information BUL642D2 to?220 50 units/rail BUL642D2g to?220 (pb?free) 50 units/rail to?220ab case 221a style 1 marking diagram BUL642D2 = device code a = assembly location y = year ww = work week g = pb?free package 1 2 3 4 BUL642D2g ayww
BUL642D2 http://onsemi.com 2 maximum ratings rating symbol value unit collector?emitter sustaining voltage v ceo 440 vdc collector?base breakdown voltage v ces 825 vdc emitter?base voltage v ebo 11 vdc collector current ? continuous ? peak (note 1) i c i cm 3.0 8.0 adc base current ? continuous ? peak (note 1) i b i bm 2.0 4.0 adc *total device dissipation @ t c = 25 c *derate above 25 c p d 75 0.6 w w/ c operating and storage temperature t j , t stg ?65 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied, damage may occur and reliability may be affected. typical gain rating symbol value unit typical gain @ i c = 1 a, v ce = 2 v typical a, v ce = 1 v h fe h fe 45 50 ? ? thermal characteristics characteristic symbol value unit thermal resistance, junction?to?case r jc 1.6 c/w thermal resistance, junction?to?ambient r ja 62.5 c/w maximum lead temperature for soldering purposes: 1/8 in. from case for 5 seconds t l 260 c 1. pulse test: pulse width = 5.0 ms, duty cycle = 10%
BUL642D2 http://onsemi.com 3 electrical characteristics (t c = 25 c unless otherwise noted) ???????????????????? ???????????????????? characteristic ???? ???? ??? ??? ???? ???? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ???????????????????? ? ?????????????????? ? ???????????????????? collector?emitter sustaining voltage (i c = 200 ma, l = 25 mh) ???? ? ?? ? ???? v ceo(sus) ??? ? ? ? ??? 440 ???? ? ?? ? ???? ? ???? ? ?? ? ???? ? ??? ? ? ? ??? vdc ???????????????????? ???????????????????? ???? ???? ??? ??? ???? ???? ???? ???? ??? ??? ???????????????????? ???????????????????? ???? ???? ??? ??? ???? ???? ???? ???? ??? ??? ??????????????? ??????????????? ?????? ?????? c @ t c = 125 c ???? ???? ??? ??? ???? ???? ???? ???? ??? ??? adc ??????????????? ? ????????????? ? ??????????????? collector cutoff current (v ce = rated v ces , v eb = 0) ?????? ? ???? ? ?????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ???? i ces ??? ? ? ? ??? ? ? ???? ? ?? ? ???? ? ? ???? ? ?? ? ???? 100 1000 ??? ? ? ? ??? adc ???????????????????? ???????????????????? ???? ???? ??? ??? ???? ???? ???? ???? ??? ??? adc ????????????????????????????????? ????????????????????????????????? on characteristics ???????????????????? ? ?????????????????? ? ???????????????????? base?emitter saturation voltage (ic = 0.5 adc, i b = 100 madc (i c = 1 adc, i b = 0.2 adc) ???? ? ?? ? ???? v be(sat) ??? ? ? ? ??? ? ? ???? ? ?? ? ???? ? ? ???? ? ?? ? ???? 1.1 1.5 ??? ? ? ? ??? vdc ???????????????????? ? ?????????????????? ? ???????????????????? collector?emitter saturation voltage (i c = 0.5 adc, i b = 50 madc) (i c = 2 adc, i b = 0.2 adc) ???? ? ?? ? ???? v ce(sat) ??? ? ? ? ??? ? ? ???? ? ?? ? ???? ? ? ???? ? ?? ? ???? 0.5 1.5 ??? ? ? ? ??? vdc ???????????????????? ? ?????????????????? ? ???????????????????? dc current gain (i c = 0.5 adc, v ce = 1 vdc) (i c = 0.5 adc, v ce = 3 vdc) ???? ? ?? ? ???? h fe ??? ? ? ? ??? 16 18 ???? ? ?? ? ???? ? ? ???? ? ?? ? ???? ? ? ??? ? ? ? ??? ? ????????????????????????????????? ????????????????????????????????? dynamic saturation voltage ?????? ? ???? ? ? ???? ? ? ???? ? ? ???? ? ? ???? ? ? ???? ? ?????? dynamic saturation voltage: ?????? ? ???? ? ? ???? ? ? ???? ? ?????? i c = 0.5 adc i b1 = 50 madc v cc = 125 vdc ????? ? ??? ? ????? @ 1 s ?????? ? ???? ? ?????? @ t c = 25 c @ t c = 125 c ???? ? ?? ? ? ?? ? ? ?? ? ? ?? ? ? ?? ? ? ?? ? ???? v ce(dsat) ??? ? ? ? ??? ? ? ???? ? ?? ? ???? 2.0 5.0 ???? ? ?? ? ???? ? ? ??? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ??? v ????? ? ??? ? ????? @ 3 s ?????? ? ???? ? ?????? @ t c = 25 c ??? ? ? ? ??? ? ? ???? ? ?? ? ???? 0.2 1.3 ???? ? ?? ? ???? ? ? ?????? ? ???? ? ? ???? ? ?????? i c = 1 adc i b1 = 100 madc v cc = 300 vdc ????? ????? s ?????? ?????? c @ t c = 125 c ??? ??? ???? ???? ???? ???? ????? ? ??? ? ????? @ 3 s ?????? ? ???? ? ?????? @ t c = 25 c ??? ? ? ? ??? ? ? ???? ? ?? ? ???? 1.0 3.0 ???? ? ?? ? ???? ? ? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ???????????????????? ? ?????????????????? ? ???????????????????? current gain bandwidth i c = 0.5 adc, v ce = 10 vdc, f = 1 mhz ???? ? ?? ? ???? f t ??? ? ? ? ??? ? ???? ? ?? ? ???? 13 ???? ? ?? ? ???? ? ??? ? ? ? ??? mhz ???????????????????? ???????????????????? ???? ???? ??? ??? ???? ???? ???? ???? ??? ??? ???????????????????? ? ?????????????????? ? ???????????????????? input capacitance @ v eb = 8 v, f = 1 mhz ???? ? ?? ? ???? c ib ??? ? ? ? ??? ? ???? ? ?? ? ???? 500 ???? ? ?? ? ???? 1000 ??? ? ? ? ??? pf ????????????????????????????????? ????????????????????????????????? diode characteristics ???????????????????? ???????????????????? forward diode voltage (i ec = 0.5 adc) (i ec = 1.0 adc) ???? ???? ??? ??? ???? ???? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? switching characteristics: resistive load (d.c. 10%, pulse width = 70 s) ??????????????? ??????????????? ?????? ?????? ???? ???? ??? ??? ???? ???? ???? ???? ??? ??? ??????????????? ??????????????? ?????? ?????? ???? ???? ??? ??? ???? ???? ???? ???? ??? ??? ??????????????? ??????????????? ?????? ?????? ???? ???? ??? ??? ???? ???? ???? ???? ??? ??? s ??????????????? ??????????????? ?????? ?????? ???? ???? ??? ??? ???? ???? ???? ???? ??? ???
BUL642D2 http://onsemi.com 4 figure 1. dc current gain figure 2. dc current gain figure 3. collector saturation region figure 4. collector?emitter saturation voltage 1.0 10 100 0.01 0.1 1 10 ?20 c 125 c 25 c i c , collector current (amp) hfe, dc current gain 1.0 10 100 0.01 0.1 1 10 ?20 c 25 c 125 c v ce = 5 v v ce = 5 v i c , collector current (amp) hfe, dc current gain 0.1 1.0 10 0.01 0.1 1.0 10 i c = 500 ma i c = 1 a i c = 3 a i c = 2a i c = 4 a i c = 5 a i b , base current (ma) v ce(sat) , voltage (v) 0.01 0.1 1.0 10 0.01 0.1 1 10 125 c ?20 c 25 c i c , collector current (amp) v ce(sat) , voltage (v) 0.1 1.0 10 0.01 0.1 1.0 10 125 c ?20 c 25 c i c , collector current (amp) figure 5. collector?emitter saturation voltage v ce , voltage (v) 0.1 1.0 10 0.01 0.1 1.0 10 125 c ?20 c 25 c i c /i b = 5.0 i c /i b = 10 i c /i b = 20 i c , collector current (amp) figure 6. collector?emitter saturation voltage v ce , voltage (v)
BUL642D2 http://onsemi.com 5 figure 7. base?emitter saturation voltage figure 8. base?emitter saturation voltage figure 9. base?emitter saturation voltage figure 10. forward diode voltage 0.1 1.0 10 0.01 0.1 1.0 10 125 c 25 c ?20 c i c , collector current (amp) v be , voltage (v) i c /i b = 5.0 0.01 0.1 1.0 10 0.01 0.1 1.0 10 125 c 25 c ?20 c v be , voltage (v) i c , collector current (amp) i c /i b = 10 0.01 0.1 1.0 10 0.01 0.1 1.0 10 ?20 c 25 c 125 c i c /i b = 20 i c , collector current (amp) 0.1 1.0 10 0.01 0.1 1.0 10 25 c 125 c reverse emitter?collector (amp) forward diodes voltage (v) figure 11. capacitance figure 12. resistive switch time, storage time t on 10 100 1000 1.0 10 100 cob cib v r , reverse voltage (v) v be , voltage (v) c, capacitance (pf) 10 100 1000 10000 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v cc = 125 v, pw = 100 s, g = 10 i b2 = i c @ 125 c i b2 = i c /2 @ 125 c i b2 = i c /2 @ 25 c i b2 = i c @ 25 c t, time ( s)
BUL642D2 http://onsemi.com 6 figure 13. resistive switch time, storage time figure 14. resistive switch time, fall time figure 15. figure 16. power derating 1.0 0 160 40 20 t c , case temperature ( c) 0.6 0.2 power derating factor 60 80 100 120 140 0.4 0.8 second breakdown derating thermal derating 0 1.0 2.0 3.0 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 i b2 = i c @ 125 c i b2 = i c /2 @ 125 c i b2 = i c /2 @ 25 c i b2 = i c @ 25 c t, time ( s) v cc = 125 v, pw = 100 s, g = 10 i c , collector current (amp) 50 150 250 350 450 550 650 750 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 i c , collector current (amp) i b2 = i c @ 125 c i b2 = i c /2 @ 125 c i b2 = i c /2 @ 25 c i b2 = i c @ 25 c v cc = 125 v, pw = 100 s, g = 10 t, time ( s) 0.01 0.1 1.0 10 100 10 100 1000 dc 5 ms 10 s 1 s 1 ms i c , collector current (amps) v ce , collector?emitter voltage (v) there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ?v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 15 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits do not derate like thermal limitations. allowable current at the voltages shown on figure 10 may be found at any case temperature by using the appropriate curve on figure 16. t j(pk) may be calculated from the data in figure 18. at any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
BUL642D2 http://onsemi.com 7 energy i c npd characterization lab figure 17. typical avalanche energy test/waveforms v ce figure 18. thermal response 1 0.01 1000 100 0.01 t, time (ms) 0.1 r(t) transient thermal 10 1 0.1 resistance (normalized) r jc (t) = r(t) r jc r jc = 5 c/w max d curves apply for power pulse train shown read time at t 1 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 b
BUL642D2 http://onsemi.com 8 package dimensions case 221a?09 issue aa to?220 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 ??? 1.15 ??? z ??? 0.080 ??? 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 BUL642D2/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
|
